When comparing a TTL and a CMOS NAND gate, which statement is accurate?

In comparing TTL (Transistor-Transistor Logic) and CMOS (Complementary Metal-Oxide-Semiconductor) NAND gates, the correct assertion is that both types exhibit active pull-up characteristics. This means that in both TTL and CMOS NAND configurations, there are components that actively pull the output high when the conditions for a high output are met.

In a TTL NAND gate, the active pull-up is provided by a transistor that connects the output to the positive supply voltage when the output is low and no input conditions allow for the output to remain low. Similarly, in CMOS technology, the active pull-up is achieved through the PMOS transistor, which pulls the output high when needed.

When considering the other options, TTL gates do not have three output states; they have two (high and low), while CMOS can be designed for additional states, but standard NAND implementations typically mirror the binary states of TTL. Additionally, input power sourcing is different between these technologies, as CMOS gates have very low input current requirements compared to TTL gates, which typically draw more current due to their bipolar structure. Lastly, Schmitt trigger functionality is not inherent in standard NAND gate designs of either technology; it is a specific feature that requires additional circuitry to implement enhanced speed and noise